Palladium diffusion transport in n-type GaAs

被引：4

作者：

Yeh, Der-Hwa ^{[1
]}

Hsieh, Li-Zen

Chang, Liann-Be

Jeng, Ming-Jer

Kuei, Ping-Yu

机构：

[1] Natl Def Univ, Chung Cheng Inst Technol, Dept Elect Engn, Tao Yuan 335, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 3A期

关键词：

diffusion coefficient; palladium (Pd); GaAs; SIMS;

D O I：

10.1143/JJAP.46.968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The aim of this study is to determine the diffusion coefficient of palladium (Pd) in gallium arsenide under different annealing conditions. The extent of diffusion was characterized using the secondary ion mass spectrometry (SIMS) technique. The temperature-dependent diffusion coefficients of Pd are 8.4 x 10(-13), 2.25 x 10(-12), and 9.51 x 10(-12) cm(2)/s, respectively, at temperatures of 400, 550, and 850 degrees C. The Pd diffusion constant and activation energy in GaAs are calculated as 3.54 x 10(-10) cm(2)/s and 0.35 eV, respectively. This indicates that the major diffusion mechanism of Pd in GaAs is interstitial diffusion.

引用

页码：968 / 970

页数：3

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