P-type and N-type Bi2Te3/PbTe functional gradient materials for thermoelectric power generation

被引:4
作者
Lee, Kwang-Yong [1 ]
Oh, Tae-Sung [1 ]
机构
[1] Hongik Univ, Dept Mat Sci & Engn, 72-1 Sangsu Dong, Seoul 121791, South Korea
来源
PROGRESS IN POWDER METALLURGY, PTS 1 AND 2 | 2007年 / 534-536卷
关键词
thermoelectric materials; bismuth telluride; lead telluride; functional gradient materials; figure of merit;
D O I
10.4028/www.scientific.net/MSF.534-536.1493
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The p-type (Bi0.2Sb0.8)(2)TC3/(Pb0.7Sn0.3)Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed (Bi0.2Sb0.8)(2)Te-3 and the 0.5 at% Na2Te-dopcd (Pb0.7Sn0.3)Te powders. Also, the n-type Bi-2(Te0.9Se0.1)(3)/PbTe FGM was processed by hot-pressing the mechanically alloyed Bi-2(Te0.9Se0.1)(3) and the 0.3 wt% Bi-doped PbTe powders. With Delta T larger than 300 degrees C, the p-type (Bi0.2Sb0.8)(2)Te-3/(Pb0.7Sn0.3)Te FGM exhibited larger thermoelectric output power than those of the (Bi0.2Sb0.8)(2)Te-3 and the 0.5 at% Na2Te-doped (Pb0.7Sn0.3)Te alloys. For the n-type Bi-2(Te0.9Sc0.1)(3)/PbTe FGM, the thermoelectric output power superior to those of the Bi-2(Te0.9Se0.1)(3) and the 0.3 wt% Bi-doped PbTe was predicted at Delta T larger than 300 degrees C.
引用
收藏
页码:1493 / +
页数:2
相关论文
共 5 条
[1]  
Harman T. C., 1959, J APPL PHYS, V30, P9, DOI DOI 10.1063/1.1735334
[2]   Development and evaluation of 3-stage segmented thermoelectric elements [J].
Kang, YS ;
Niino, M ;
Nishida, IA ;
Yoshino, J .
XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98, 1998, :429-432
[3]   Thermoelectric properties of segmented Bi2Te3/PbTe [J].
Koshigoe, M ;
Kudo, Y ;
Hashimoto, M ;
Shiota, I ;
Nishida, IA .
XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98, 1998, :479-482
[4]  
Ryan M. A., 2002, Electrochemical Society Interface, V11, P30
[5]   Development of FGM thermoelectric materials in Japan - The state of the art [J].
Shiota, I ;
Nishida, IA .
PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, :364-370