Measurements of α-factor in 2-2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers

被引：15

作者：

Shterengas, L ^{[1
]}

Belenky, GL

Gourevitch, A

Kim, JG

Martinelli, RU

机构：

[1] SUNY Stony Brook, Stony Brook, NY 11794 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1528291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectra of the linewidth enhancement factor (alpha) of room-temperature-operated high-power 2-2.5 mum In(Al)GaAsSb/GaSb type-I quantum-well (QW) lasers were measured using Hakki-Paoli technique. Values of alpha at threshold were in the range 2.5 to 4 for all devices under study. Devices emitting 1 W cw power at lambda=2.5 mum have 1.5%-1.6% compressively strained QW active region and the lowest alpha equal to 2.5. Measured average filament spacings in near field are in rough agreement with predictions given by experimental alpha-factor values. (C) 2002 American Institute of Physics.

引用

页码：4517 / 4519

页数：3

共 16 条

[11] Comparison of linewidth enhancement factors in midinfrared active region materials [J].