Measurements of α-factor in 2-2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers

被引：15
作者：
Shterengas, L [1 ]
Belenky, GL
Gourevitch, A
Kim, JG
Martinelli, RU
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11794 USA
[2] Sarnoff Corp, Princeton, NJ 08543 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期
关键词：
D O I：
10.1063/1.1528291
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spectra of the linewidth enhancement factor (alpha) of room-temperature-operated high-power 2-2.5 mum In(Al)GaAsSb/GaSb type-I quantum-well (QW) lasers were measured using Hakki-Paoli technique. Values of alpha at threshold were in the range 2.5 to 4 for all devices under study. Devices emitting 1 W cw power at lambda=2.5 mum have 1.5%-1.6% compressively strained QW active region and the lowest alpha equal to 2.5. Measured average filament spacings in near field are in rough agreement with predictions given by experimental alpha-factor values. (C) 2002 American Institute of Physics.
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页码：4517 / 4519
页数：3
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