Temperature-Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

被引：9

作者：

He, Yunlong ^{[1
]}

Huang, Zeyang ^{[1
]}

Zhang, Meng ^{[2
]}

Wu, Mei ^{[1
]}

Mi, Minhan ^{[1
]}

Wang, Chong ^{[1
]}

Yang, Ling ^{[2
]}

Zhang, Chunfu ^{[1
]}

Guo, Lixin ^{[3
]}

Ma, Xiaohua ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China

[3] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Shaanxi, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 16期

关键词：

AlGaN; GaN; high electron mobility transistors; nanowire channels; temperature-dependent characteristics; transconductance; MOSFETS; HEMTS;

D O I：

10.1002/pssa.201900396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, three AlGaN/GaN nanowire channel high electron mobility transistors (NC-HEMTs) with different channel widths have been fabricated. The temperature dependent characteristics of NC-HEMTs are studied and compared with conventional HEMT. The results show that the on-state current density of NC-HEMTs have weaker temperature dependence, and the threshold voltage variation of NC-HEMTs is lower. In addition, the temperature characteristics of the drain-induced barrier lowering of NC-HEMT are first reported. Moreover, there are two main scattering mechanisms that influence the transconductance characteristics of NC-HEMT, phonon scattering and Coulomb scattering, which correspond to different gate voltage biases.

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页数：6

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