ZnO(101) films by pulsed reactive crossed-beam laser ablation

被引:10
作者
Angappane, S. [1 ,2 ,3 ]
Selvi, N. R. [1 ,2 ]
Kulkarni, G. U. [1 ,2 ]
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, DST Unit Nanosci, Bangalore 560064, Karnataka, India
[3] Ctr Liquid Crystal Res, Bangalore 560013, Karnataka, India
关键词
ZnO films; ZnO(101); pulsed laser deposition; reactive laser ablation; surface reactivity; carbon nanostructures; ZNO THIN-FILMS; OXIDE-FILMS; ZINC-OXIDE; DEPOSITION; GROWTH; SUBSTRATE; SI(111); ARRAYS; TARGET;
D O I
10.1007/s12034-009-0038-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have employed pulsed reactive crossed-beam laser ablation (PRCLA) to deposit a (101) oriented ZnO film. In this method, a supersonic jet of oxygen pulse is made to cross the laser plume from a zinc metal target while being carried to the Si(111) substrate. The obtained deposit was nanocrystalline ZnO as confirmed by a host of characterization techniques. When the substrate was held at varying temperatures, from room temperature to 900 degrees C, the crystallinity of the obtained films increased as expected, but importantly, the crystallographic orientation of the films was varied. High substrate temperatures produced the usual (001) oriented films, while lower substrate temperatures gave rise to increasingly (101) oriented films. The substrate held at room temperature contained only the (101) orientation. The film morphology also varied with the substrate temperature, from being nanoparticulate to rod-like deposits for higher deposition temperatures. Surprisingly, the (101) orientation showed reactivity with acetone forming carbonaceous nanostructures on the surface.
引用
收藏
页码:253 / 258
页数:6
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