Electrical-field-induced magnetic Skyrmion ground state in a two-dimensional chromium tri-iodide ferromagnetic monolayer

被引:11
作者
Liu, Jie [1 ,2 ,3 ]
Shi, Mengchao [1 ,2 ]
Mo, Pinghui [1 ,2 ]
Lu, Jiwu [1 ,2 ]
机构
[1] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China
[2] Natl Supercomp Ctr Changsha, Changsha 410082, Hunan, Peoples R China
[3] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
关键词
INTRINSIC FERROMAGNETISM; CRYSTAL;
D O I
10.1063/1.5030441
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using fully first-principles non-collinear self-consistent field density functional theory (DFT) calculations with relativistic spin-orbital coupling effects, we show that, by applying an out-of-plane electrical field on a free-standing two-dimensional chromium tri-iodide (CrI3) ferromagnetic monolayer, the Neel-type magnetic Skyrmion spin configurations become more energetically-favorable than the ferromagnetic spin configurations. It is revealed that the topologically-protected Skyrmion ground state is caused by the breaking of inversion symmetry, which induces the nontrivial Dzyaloshinskii-Moriya interaction (DMI) and the energetically-favorable spin-canting configuration. Combining the ferromagnetic and the magnetic Skyrmion ground states, it is shown that 4-level data can be stored in a single monolayer-based spintronic device, which is of practical interests to realize the next-generation energy-efficient quaternary logic devices and multilevel memory devices. (c) 2018 Author(s).
引用
收藏
页数:8
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