Al-doped ZnO films by pulsed laser deposition at room temperature

被引：58
作者：
Liu, Yaodong [1 ]
Zhao, Lei [1 ]
Lian, Jianshe [1 ]
机构：
[1] Jilin Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab Automobile Mat, Changchun 130025, Peoples R China
来源：
VACUUM | 2006年 / 81卷 / 01期
关键词：
Al doped film; ultraviolet photoluminescence; pulsed laser deposition;
D O I：
10.1016/j.vacuum.2006.02.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline Al-doped ZnO films with good photoluminescence property were successfully deposited on quartz glass substrates by pulsed laser deposition (PLD) at room temperature. The films were obtained by ablating a metallic target (Zn:Al 3 wt%) at various laser energy densities (1.0-2.1 J/cm(2)) in oxygen atmosphere (9 Pa). The structure of the films was characterized by XRD. Ultraviolet photoluminescence centered at 359-361 nm was observed in the room temperature PL spectra of the Al-doped ZnO films. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：18 / 21
页数：4
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