SnO2:Ga thin films as oxygen gas sensor

被引：51
|
作者：
Tiburcio-Silver, A
Sánchez-Juárez, A
机构：
[1] UAEM, CIICAP, Cuernavaca 62580, Morelos, Mexico
[2] UAEM, CIE, Cuernavaca 62580, Morelos, Mexico
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 110卷 / 03期
关键词：
thin films; tin oxide; oxygen; chemisorption;
D O I：
10.1016/j.mseb.2004.02.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ga-doped SnO2 thin films deposited by spray pyrolysis were investigated as oxygen gas sensors. Gallium was added to the films to enhance the catalytic activity of the surface's film to oxygen. Film resistance was studied in an environment of dry air loaded with oxygen in excess kat partial pressures in the range from 0 to 8.7 8 X 10(3) Pa. The best sensitivity lies close to partial pressures of 133.3 Pa. Film sensitivity reach a maximum at 350degreesC. For this temperature and a doping concentration of 3 at.% of Ga in the starting solution, a sensitivity up to 2.1 was obtained. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：268 / 271
页数：4
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