A 1.6 ppm/°C bandgap voltage reference for an extended operating temperature range

被引：2

作者：

Zawawi, Ruhaifi Abdullah ^{[1
]}

Zulkifli, Tun Zainal Azni ^{[2
]}

机构：

[1] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr CEDEC, Seberang Prai Selatan 14300, Pulau Pinang, Malaysia

[2] Univ Sains Malaysia, Sch Elect & Elect Engn, RMIC Grp, Seberang Prai Selatan 14300, Pulau Pinang, Malaysia

来源：

IEICE ELECTRONICS EXPRESS | 2014年 / 11卷 / 12期

关键词：

CMOS bandgap reference; current-control circuit;

D O I：

10.1587/elex.11.20140383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new CMOS bandgap voltage reference (BGR) is proposed and simulated using Silterra 0.13 mu m CMOS technology. The proposed BGR utilizes 3 curvature-corrected current generators that compensate for the output voltage variation in an extended temperature range. The proposed circuit generates an output voltage of 1.181 V with a variation of 380 mu V from -50 degrees C to 150 degrees C.

引用

页数：5

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