Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

被引：20

作者：

Sugiura, Kenji ^{[1
]}

Ohta, Hiromichi ^{[1
]}

Nakagawa, Shin-ichi ^{[1
]}

Huang, Rong ^{[2
]}

Ikuhara, Yuichi ^{[2
,3
]}

Nomura, Kenji ^{[4
]}

Hosono, Hideo ^{[4
,5
]}

Koumoto, Kunihito ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Japan Fine Ceram Ctr, Nanostruct Res Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan

[3] Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan

[4] Tokyo Inst Technol, FCRC, JST, ERATO SORST, Yokohama, Kanagawa 2268503, Japan

[5] Tokyo Inst Technol, Materals & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 15期

关键词：

electrical resistivity; scanning electron microscopy; Seebeck effect; semiconductor epitaxial layers; semiconductor materials; sodium compounds; transmission electron microscopy; THIN-FILMS; THERMOELECTRIC PROPERTIES; SINGLE-CRYSTAL; SEMICONDUCTOR; NAXCOO2; NA;

D O I：

10.1063/1.3119631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Herein we report the anisotropic carrier transport properties of a layered cobaltate, NaxCoO2 epitaxial film grown on the m-plane of an alpha-Al2O3 substrate using reactive solid-phase epitaxy. Scanning and transmission electron microscopy analyses revealed that NaxCoO2 was heteroepitaxially grown with the CoO2 conducting planes inclined by similar to 43 degrees against the alpha-Al2O3 substrate surface. The electrical resistivity parallel to the CoO2 planes was similar to 1/5 of the perpendicular one, but the parallel Seebeck coefficient was about twice as large as the perpendicular one. Hence, a higher thermoelectric efficiency in the cobaltates can be obtained within the CoO2 planes.

引用

页数：3

共 22 条

[1] Fermi surface and quasiparticle dynamics of Na0.7CoO2 investigated by angle-resolved photoemission spectroscopy -: art. no. 246402 [J].

Hasan, MZ ;

Chuang, YD ;

Qian, D ;

Li, YW ;

Kong, Y ;

Kuprin, A ;

Fedorov, AV ;

Kimmerling, R ;

Rotenberg, E ;

Rossnagel, K ;

Hussain, Z ;

Koh, H ;

Rogado, NS ;

Foo, ML ;

Cava, RJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (24) :246402-1

[2] Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS [J].

Hiramatsu, H ;

Ueda, K ;

Ohta, H ;

Orita, M ;

Hirano, M ;

Hosono, H .

APPLIED PHYSICS LETTERS, 2002, 81 (04) :598-600

[3]

HIRAMATSU H, 1997, J JPN SOC POWDER POW, V44, P44

[4] Microstructure evolution of Ca0.33CoO2 thin films investigated by high-angle annular dark-field scanning transmission electron microscopy [J].

Huang, Rong ;

Mizoguchi, Teruyasu ;

Sugiura, Kenji ;

Nakagawa, Shin-ichi ;

Ohta, Hiromichi ;

Saito, Tomohiro ;

Koumoto, Kunihito ;

Hirayama, Tsukasa ;

Ikuhara, Yuichi .

JOURNAL OF MATERIALS RESEARCH, 2009, 24 (01) :279-287

[5] ANISOTROPIC GALVANOMAGNETIC AND THERMOELECTRIC PROPERTIES OF N-TYPE BI2TE3 SINGLE-CRYSTAL WITH THE COMPOSITION OF A USEFUL THERMOELECTRIC COOLING MATERIAL [J].

KAIBE, H ;

TANAKA, Y ;

SAKATA, M ;

NISHIDA, I .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1989, 50 (09) :945-950

[6] Anisotropic thermoelectric properties in layered cobaltite AxCoO2 (A=Sr and Ca) thin films [J].

Kanno, T ;

Yotsuhashi, S ;

Adachi, H .

APPLIED PHYSICS LETTERS, 2004, 85 (05) :739-741

[7] CRYSTAL-GROWTH OF MANGANESE SILICIDE, MNSI APPROXIMATELY 1.73 AND SEMICONDUCTING PROPERTIES OF MN15SI26 [J].

KAWASUMI, I ;

SAKATA, M ;

NISHIDA, I ;

MASUMOTO, K .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (02) :355-366

[8] Large enhancement of the thermopower in NaxCoO2 at high Na doping [J].

Lee, Minhyea ;

Viciu, Liliana ;

Li, Lu ;

Wang, Yayu ;

Foo, M. L. ;

Watauchi, S. ;

Pascal, R. A., Jr. ;

Cava, R. J. ;

Ong, N. P. .

NATURE MATERIALS, 2006, 5 (07) :537-540

[9] Synthesis, crystal structure and physical properties of layered cobalt oxide CaxCoO2 (x ∼ 0.47) [J].

Miyazaki, Yuzuru ;

Huang, Xiangyang ;

Kajiwara, Takashi ;

Yamane, Hisanori ;

Kajitani, Tsuyoshi .

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2009, 117 (1361) :42-46

[10] Possible effects of charge frustration in NaxCoO2:: Bandwidth suppression, charge orders, and resurrected resonating valence bond superconductivity -: art. no. 214516 [J].

Motrunich, OI ;

Lee, PA .

PHYSICAL REVIEW B, 2004, 69 (21) :214516-1

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