Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

被引：42

作者：

Beattie, N. S. ^{[1
]}

Zoppi, G. ^{[1
]}

See, P. ^{[2
]}

Farrer, I. ^{[3
]}

Duchamp, M. ^{[4
,5
]}

Morrison, D. J. ^{[6
]}

Miles, R. W. ^{[1
]}

Ritchie, D. A. ^{[3
]}

机构：

[1] Northumbria Univ, Northumbria Photovolta Applicat Grp, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

[2] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[4] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electron, D-52425 Julich, Germany

[5] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[6] Solar Capture Technol, Blyth NE24 1LZ, Northd, England

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 130卷

关键词：

InAs quantum dots; Concentrator; Solar cell; BAND SOLAR; EFFICIENCY;

D O I：

10.1016/j.solmat.2014.07.022

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-V-oc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices. (C) 2014 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

引用

页码：241 / 245

页数：5

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