Thermal Annealing Effects of SrTiO3 Film on Si(100)

被引：2

作者：

Suwardy, Joko ^{[1
]}

Darma, Yudi ^{[1
]}

机构：

[1] Inst Teknol Bandung, Dept Phys, Quantum Semicond & Devices Lab, Jalan Tamansari 40132, Indonesia

来源：

PADJADJARAN INTERNATIONAL PHYSICS SYMPOSIUM 2013 (PIPS-2013): CONTRIBUTION OF PHYSICS ON ENVIRONMENTAL AND ENERGY CONSERVATIONS | 2013年 / 1554卷

关键词：

Strontium titanate; Thermal annealing; Pulsed laser deposition; Crystallinity;

D O I：

10.1063/1.4820297

中图分类号：

P3 [地球物理学]; P59 [地球化学];

学科分类号：

0708 ; 070902 ;

摘要：

Strontium titanate (SrTiO3) thin film has been deposited on Si (100) substrate using pulsed laser deposition (PLD) technique. Film deposition was carried out at low temperature (150 degrees C) by maintaining the pressure at 10(-4) Torr. SrTiO3 film formation on Si substrate was confirmed by SEM, AFM, XRD, and Raman Spectroscopy. SEM and AFM images showed that SrTiO3 film has uniform growth on Si substrate. Raman and XRD spectroscopy also supported the growth of SrTiO3 film on Si(100) substrate. Thermal annealing was carried out to investigate the structural stability of this structure by annealing up to 900 degrees C for 10 min each. Structural changes of SrTiO3/Si were analyzed by mean XRD spectra. The X-Ray diffraction results confirm the crystallinity improvement through atomic arrangements during thermal annealing process. Some oxidation and carbon contamination were also observable since the annealing process was carried out in atmospheric ambience.

引用

页码：112 / 115

页数：4

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