Investigation of carrier streaming effect for the low spike fast IGBT turn-off

被引：0

作者：

Onozawa, Y. ^{[1
,2
]}

Otsuki, M.

Seki, Y.

机构：

[1] Fuji Elect Device Technol Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan

[2] Fuji Elect Adv Technol Co Ltd, Matsumoto, Nagano 3900821, Japan

来源：

PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年

关键词：

spike voltage; Turn-off di/dt control; excess carrier; swept-out current; collector injection efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the investigation of the IGBT turn-off phenomena especially focused on the di/dt controlling in order to suppress the spike voltage. The design concepts for improvement of the trade-off relationship between the turn-off power dissipation and the spike voltage are represented. The new turn-off di/dt control method, the combination of the smaller gate resistance and the controlling the collector injection efficiency, has been able to realize about 30% reduction in the turn-off energy compared to the conventional method, under the condition of the same spike voltage.

引用

页码：173 / +

页数：2