Investigation of carrier streaming effect for the low spike fast IGBT turn-off

被引：0
|
作者：
Onozawa, Y. [1 ,2 ]
Otsuki, M.
Seki, Y.
机构：
[1] Fuji Elect Device Technol Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan
[2] Fuji Elect Adv Technol Co Ltd, Matsumoto, Nagano 3900821, Japan
来源：
PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年
关键词：
spike voltage; Turn-off di/dt control; excess carrier; swept-out current; collector injection efficiency;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the investigation of the IGBT turn-off phenomena especially focused on the di/dt controlling in order to suppress the spike voltage. The design concepts for improvement of the trade-off relationship between the turn-off power dissipation and the spike voltage are represented. The new turn-off di/dt control method, the combination of the smaller gate resistance and the controlling the collector injection efficiency, has been able to realize about 30% reduction in the turn-off energy compared to the conventional method, under the condition of the same spike voltage.
引用
收藏
页码：173 / +
页数：2
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