Photoluminescence quenching in films of conjugated polymers by electrochemical doping

被引：43

作者：

van Reenen, S. ^{[1
]}

Vitorino, M. V. ^{[1
,2
]}

Meskers, S. C. J. ^{[3
]}

Janssen, R. A. J. ^{[1
,3
]}

Kemerink, M. ^{[1
,4
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Univ Lisbon, Dept Fis, P-1749016 Lisbon, Portugal

[3] Eindhoven Univ Technol, Dept Chem Engn, NL-5600 MB Eindhoven, Netherlands

[4] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 20期

关键词：

LIGHT-EMITTING-DIODES; P-N-JUNCTION; EXCITON DIFFUSION; ENERGY-TRANSFER; CHARGE; POLY(3-HEXYLTHIOPHENE); TRANSISTORS; CELLS; RECOMBINATION; DYNAMICS;

D O I：

10.1103/PhysRevB.89.205206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An important loss mechanism in organic electroluminescent devices is exciton quenching by polarons. Gradual electrochemical doping of various conjugated polymer films enabled the determination of the doping density dependence of photoluminescence quenching. Electrochemical doping was achieved by contacting the film with a solid electrochemical gate and an injecting contact. A sharp reduction in photoluminescence was observed for doping densities between 1018 and 1019 cm(-3). The doping density dependence is quantitatively modeled by exciton diffusion in a homogeneous density of polarons followed by either F "orster resonance energy transfer or charge transfer. Both mechanisms need to be considered to describe polaron-induced exciton quenching. Thus, to reduce exciton-polaron quenching in organic optoelectronic devices, both mechanisms must be prevented by reducing the exciton diffusion, the spectral overlap, the doping density, or a combination thereof.

引用

页数：10