Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

被引：42

作者：

Longobardi, Giorgia ^{[1
]}

Udrea, Florin ^{[1
]}

Sque, Stephen ^{[2
]}

Hurkx, Godefridus A. M. ^{[2
]}

Croon, Jeroen ^{[2
]}

Napoli, Ettore ^{[3
]}

Sonsky, Jan ^{[4
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

[2] NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[3] Univ Naples Federico II, Dept Diplamo Elect Engn, I-80125 Naples, Italy

[4] NXP Semicond, B-06560 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期

关键词：

Gallium nitride (GaN); metal-insulator-semiconductor field-effect transistor (MISFET); two-dimensional electron gas (2DEG); surface traps; SURFACE-STATES;

D O I：

10.1109/LED.2013.2290471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As an important step in understanding trap-related mechanisms in AlGaN/GaN transistors, the physical properties of surface states have been analyzed through the study of the transfer characteristics of a MISFET. This letter focused initially on the relationship between donor parameters (concentration and energy level) and electron density in the channel in AlGaN/GaN heterostructures. This analysis was then correlated to dc and pulsed measurements of the transfer characteristics of a MISFET, where the gate bias was found to modulate either the channel density or the donor states. Traps-free and traps-frozen TCAD simulations were performed on an equivalent device to capture the donor behavior. A donor concentration of 1.14 x 10(13) cm(-2) with an energy level located 0.2 eV below the conduction band edge gave the best fit to measurements. With the approach described here, we were able to analyze the region of the MISFET that corresponds to the drift region of a conventional HEMT.

引用

页码：27 / 29

页数：3

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