Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

被引：35
|
作者：
Wang, M. J. [1 ]
Yuan, L. [1 ]
Cheng, C. C. [2 ]
Beling, C. D. [2 ]
Chen, K. J. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期
关键词：
annealing; diffusion; fluorine; gallium compounds; III-V semiconductors; ion implantation; positron annihilation; semiconductor doping; semiconductor thin films; vacancies (crystal); wide band gap semiconductors; PLASMA TREATMENT; ALGAN/GAN HEMTS; ENHANCEMENT-MODE; VACANCIES;
D O I：
10.1063/1.3081019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Defect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (V(Ga)) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1x10(15) cm(-2). Implantation-induced V(Ga) tend to aggregate and form vacancy clusters after postimplantation annealing in N(2) ambient at 600 degrees C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN.
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