EFFECT OF ELECTRIC FIELD, TEMPERATURE AND CORE DIMENSIONS IN III-V COMPOUND CORE-SHELL NANOWIRES

In this paper, we have used semiclassical Monte Carlo method to show the dependence of spin relaxation length in III-V compound semiconductor core-shell nanowires on different parameters such as lateral electric field, temperature and core dimensions. We have reported the simulation results for electric field in the range of 0.5-10 kV/cm, temperature in the range of 77-300 K and core length ranging from 2 nm to 8 nm. The spin relaxation mechanisms used in III-V compound semiconductor core-shell nanowire are D'yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation. Depending upon the choice of materials for core and shell, nanowire forms two types of band structures. We have used InSb-GaSb core-shell nanowire and InSb-GaAs core-shell nanowire and nanowire formed by swapping the core and shell materials to show all the results.