Two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs

被引：0

作者：

He, Pei ^{[1
]}

Ke, Daoming ^{[1
]}

Hu, Pengfei ^{[1
]}

机构：

[1] Anhui Univ, Sch Elect & Informat Engn, Hefei 230601, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 01期

关键词：

EFFECTIVE CHANNEL-LENGTH; NANOMETER REGIME; EXTRACTION; GATE; BIAS;

D O I：

10.7567/JJAP.55.014302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, a two-dimensional physically based semi-analytical model of source/drain series resistance in MOSFETs is developed, in which only one parameter needs to be extracted by measurement and the extracted parameter can be repeatedly used when the structure size of the source or drain is changed. The model at the first time separates the resistance into two independent parameters that multiply each other. One is the extracted parameter that is only related to the resistivity. The other one is calculated by the expressions obtained by using the semi-analytical method and Eigen function expansion method, and is only related to the structure size of the source or drain area. The model provides a new approach to solve the resistance problem and matches well with simulation results. It can be used easily to estimate the resistance when the device structure changes in device design. (C) 2016 The Japan Society of Applied Physics

引用

页数：6

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