Chemical analysis of pulsed laser deposited a-CNx films by comparative infrared and X-ray photoelectron spectroscopies

被引:62
作者
Szörényi, T
Fuchs, C
Fogarassy, E
Hommet, J
Le Normand, F
机构
[1] PHASE, CNRS, F-67037 Strasbourg 2, France
[2] IPCMS, F-67037 Strasbourg 2, France
[3] Res Grp Laser Phys, H-6720 Szeged, Hungary
关键词
carbon nitride; infrared (IR) absorption spectroscopy; pulsed laser deposition; X-ray photoelectron spectroscopy (XPS);
D O I
10.1016/S0257-8972(99)00580-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193 nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon-carbon and carbon-nitrogen bond configuration is achieved in a broad range as followed by X-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption spectroscopy. Based on the comparative and quantitative analysis of changes in measured IR versus XPS spectra as a function of reactive gas pressure, laser fluence and target-to-substrate distance, and on a critical review of the existing interpretation of IR data, an assignment of the components of the broad band extending from 900 to 1900 cm(-1) in the IR spectra to specific carbon-carbon and carbon-nitrogen bond configurations is proposed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:308 / 312
页数:5
相关论文
共 25 条
  • [1] Spectroscopic studies during pulsed laser ablation deposition of C-N films
    Acquaviva, S
    Caricato, AP
    DeGiorgi, ML
    Luches, A
    Perrone, A
    [J]. APPLIED SURFACE SCIENCE, 1997, 109 : 408 - 412
  • [2] Optical emission diagnostic of laser-induced plasma during CNx film deposition
    Aldea, E
    Caricato, AP
    Dinescu, G
    Luches, A
    Perrone, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B): : 4686 - 4689
  • [3] Deposition of C-N films by reactive laser ablation
    DAnna, E
    Luches, A
    Perrone, A
    Acquaviva, S
    Alexandrescu, R
    Mihailescu, IN
    Zemek, J
    Majni, G
    [J]. APPLIED SURFACE SCIENCE, 1996, 106 : 126 - 131
  • [4] Carbon nitride films prepared by excimer laser ablation
    Gonzalez, P
    Soto, R
    Parada, EG
    Redondas, X
    Chiussi, S
    Serra, J
    Pou, J
    Leon, B
    PerezAmor, M
    [J]. APPLIED SURFACE SCIENCE, 1997, 109 : 380 - 383
  • [5] Synthesis of carbon nitride films at low temperature
    Hammer, P
    Baker, MA
    Lenardi, C
    Gissler, W
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (01): : 107 - 112
  • [6] STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-CARBON NITRIDE
    HAN, HX
    FELDMAN, BJ
    [J]. SOLID STATE COMMUNICATIONS, 1988, 65 (09) : 921 - 923
  • [7] Structure and properties of carbon nitride films synthesized by low energy ion bombardment
    He, XM
    Shu, L
    Li, WZ
    Li, HD
    [J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (06) : 1595 - 1602
  • [8] Vacuum ultraviolet and visible optical emission spectra from laser ablation of graphite at 193 nm: Application to carbon nitride thin films deposition
    Henck, R
    Fuchs, C
    Fogarassy, E
    Hommet, J
    Le Normand, F
    [J]. ADVANCES IN LASER ABLATION OF MATERIALS, 1998, 526 : 337 - 342
  • [9] Carbon nitride CNx film deposition assisted by IR laser ablation in a cold remote nitrogen plasma
    Jama, C
    Rousseau, V
    Dessaux, O
    Goudmand, P
    [J]. THIN SOLID FILMS, 1997, 302 (1-2) : 58 - 65
  • [10] SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS
    KAUFMAN, JH
    METIN, S
    SAPERSTEIN, DD
    [J]. PHYSICAL REVIEW B, 1989, 39 (18): : 13053 - 13060