Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC

被引：24

作者：

Li, HF ^{[1
]}

Dimitrijev, S ^{[1
]}

Sweatman, D ^{[1
]}

Harrison, HB ^{[1
]}

机构：

[1] Griffith Univ, Sch Microelect Engn, Nathan, Qld 4111, Australia

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(99)00234-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fowler-Nordheim injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300 degrees C. The results show that NO increases the electron injection barrier height to a value which is very close to the theoretical value at room temperature. Excessive temperature dependence of the electron injection barrier height is also significantly reduced by the nitridation. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：283 / 286

页数：4

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