A material removal model for silicon oxide layers in chemical mechanical planarization considering the promoted chemical reaction by the down pressure

被引：39

作者：

Wang, Yongguang ^{[1
]}

Chen, Yao ^{[1
]}

Qi, Fei ^{[1
]}

Zhao, Dong ^{[1
]}

Liu, Weiwei ^{[1
]}

机构：

[1] Soochow Univ, Sch Mech & Elect Engn, Suzhou 215021, Peoples R China

来源：

TRIBOLOGY INTERNATIONAL | 2016年 / 93卷

基金：

中国国家自然科学基金;

关键词：

CMP; Model; Promoted reaction; Chemical mechanical synergy; MOLECULAR-SCALE; PARTICLE-SIZE; MATHEMATICAL-MODEL; MICRO-CONTACT; SYNERGY; WEAR; SURFACE; GROWTH;

D O I：

10.1016/j.triboint.2015.09.008

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

This paper proposes a material removal rate model for silicon oxide layers in a chemical mechanical planarization (CMP) process based upon micro-contact force equilibrium theory and chemical mechanical synergistic effects, in which considers the promoted chemical reaction of the slurry with the wafer surface by the polishing pressure rarely investigated by previous models. The present model clarifies the contradictory relationships between the abrasive concentration and removal rate. Furthermore, the nonlinear dependences of removal rate on polishing pressure and abrasive size are addressed as well. The current theoretical predictions are in good qualitative agreement with the published experimental data. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：11 / 16

页数：6

共 37 条

[1] A mathematical model for material removal and chemical-mechanical synergy in chemical-mechanical polishing at molecular scale [J].

Bai, J. ;

Zhao, Y. W. ;

Wang, Y. G. .

APPLIED SURFACE SCIENCE, 2007, 253 (20) :8489-8494

[2] Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects [J].

Basim, GB ;

Adler, JJ ;

Mahajan, U ;

Singh, RK ;

Moudgil, BM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (09) :3523-3528

[3] Analysis of Scratches Formed on Oxide Surface during Chemical Mechanical Planarization [J].

Choi, Jae-Gon ;

Prasad, Y. Nagendra ;

Kim, In-Kwon ;

Kim, In-Gon ;

Kim, Woo-Jin ;

Busnaina, Ahmed A. ;

Park, Jin-Goo .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (02) :H186-H191

[4] Effects of slurry particles on silicon dioxide CMP [J].

Choi, WS ;

Abiade, J ;

Lee, SM ;

Singh, RK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (08) :G512-G522

[5] CHEMICAL PROCESSES IN GLASS POLISHING [J].

COOK, LM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) :152-171

[6] Effects of particle concentration on chemical mechanical planarization [J].

Cooper, K ;

Cooper, J ;

Groschopf, J ;

Flake, J ;

Solomentsev, Y ;

Farkas, J .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (12) :G109-G112

[7] Nano-scratch evaluations of copper chemical mechanical polishing [J].

Fu, Wei-En ;

Chen, Chao-Chang A. ;

Huang, Kuo-Wei ;

Chang, Yong-Qing ;

Lin, Tzeng-Yow ;

Chang, Chi-Sheng ;

Chen, Jay-San .

THIN SOLID FILMS, 2013, 529 :306-311

[8] Effects of mixed inhibitors in copper chemical mechanical polishing at a low down pressure [J].

Gong, Hua ;

Pan, Guoshun ;

Gu, Zhonghua ;

Luo, Guihai ;

Luo, Haimei .

PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART J-JOURNAL OF ENGINEERING TRIBOLOGY, 2014, 228 (10) :1180-1186

[9] CONTACT OF NOMINALLY FLAT SURFACES [J].

GREENWOOD, JA ;

WILLIAMSON, JB .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1966, 295 (1442) :300-+

[10] Biasing reaction pathways with mechanical force [J].

Hickenboth, Charles R. ;

Moore, Jeffrey S. ;

White, Scott R. ;

Sottos, Nancy R. ;

Baudry, Jerome ;

Wilson, Scott R. .

NATURE, 2007, 446 (7134) :423-427

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