Features of diffusion processes during drop epitaxy of quantum rings

被引：2

作者：

Sibirmovskii, Yu. D. ^{[1
]}

Vasil'evskii, I. S. ^{[1
]}

Vinichenko, A. N. ^{[1
]}

Eremin, I. S. ^{[1
]}

Kargin, N. I. ^{[1
]}

Kolentsova, O. S. ^{[1
]}

Strikhanov, M. N. ^{[1
]}

机构：

[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2014年 / 41卷 / 09期

关键词：

drop epitaxy; quantum rings; GaAs; quantum dots; molecular-beam epitaxy; diffusion; nanostructures;

D O I：

10.3103/S1068335614090012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The drop epitaxy process in the GaAs/AlGaAs system is experimentally and theoretically studied. Epitaxial structure samples with arrays of single and double quantum rings are grown under various growth conditions. Diffusion processes of Ga and As adatoms are considered, steady-state diffusion equations are analytically solved, and the formation mechanisms of single and double quantum rings are revealed. The results obtained make it possible to model the quantum ring profile depending on growth conditions and, hence, to control the nanostructure profile during drop epitaxy.

引用

页码：243 / 246

页数：4

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