A 4 X 64 pixel CMOS image sensor for 3-D measurement applications

被引:52
作者
Elkhalili, O [1 ]
Schrey, OM
Mengel, P
Petermann, M
Brockherde, W
Hosticka, BJ
机构
[1] Fraunhofer Inst Microelect Circuits & Syst, D-47057 Duisburg, Germany
[2] Siemens AG, Corp Technol, D-81730 Munich, Germany
关键词
3-D; CMOS photo sensor; image sensor; multiple double short time integration (MDSI); pixel array;
D O I
10.1109/JSSC.2004.829927
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 4 x 64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The Multiple Double Short Time Integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130 x 300 time. The sensor chip hag been realized in a 0.5-mum n-well standard CMOS process.
引用
收藏
页码:1208 / 1212
页数:5
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