Growth characteristics of SiC in a hot-wall CVD reactor with rotation

被引：15

作者：

Zhang, J ^{[1
]}

Forsberg, U ^{[1
]}

Isacson, M ^{[1
]}

Ellison, A ^{[1
]}

Henry, A ^{[1
]}

Kordina, O ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 04期

关键词：

crystal morphology; doping; chemical vapor deposition processes; hot wall reactors; semiconducting materials;

D O I：

10.1016/S0022-0248(02)00921-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A version of the hot-wall reactor, where rotation has been added is investigated for the growth of SiC. The capacity of the reactor is 2 in wafers. The rotation is realized by gas foil levitation of a single plate carrying all three wafers. Uniformities of thickness and doping below 1% and 5%, respectively have been obtained. The run to run reproducibility of n-type doping is within +/-10%. The morphology is studied and greatly improved through a modification of the hot-zone, which however made the thickness uniformity marginally worse. (C) 2002 Published by Elsevier Science B.V.

引用

页码：431 / 438

页数：8

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