Growth of InGaN alloy on cubic GaN by metalorganic vapor-phase epitaxy

被引：0

作者：

Nakadaira, A ^{[1
]}

Tanaka, H ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Cyber Space Labs, Musashino, Tokyo 1808585, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<529::AID-PSSA529>3.0.CO;2-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic InGaN alloys were grown on cubic GaN/GaAs (100) using low-pressure metalorganic vapor-phase epitaxy. A high-resolution cross-sectional transmission electron microscope image revealed their cubic crystal structure. In0.03Ga0.97N grown at 770 degrees C showed near band edge emission at 3.12 eV and its peak width was 110 meV at room temperature. The indium molar fraction tended to decrease when the growth temperature increased above 720 degrees C It also decreased as the NH3 flow rate decreased. The lowest energy of the near-band edge emission of these InGaN alloys at room temperature was 2.98 eV.

引用

页码：529 / 534

页数：6

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