Growth of InGaN alloy on cubic GaN by metalorganic vapor-phase epitaxy

被引：0

作者：

Nakadaira, A ^{[1
]}

Tanaka, H ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Cyber Space Labs, Musashino, Tokyo 1808585, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<529::AID-PSSA529>3.0.CO;2-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic InGaN alloys were grown on cubic GaN/GaAs (100) using low-pressure metalorganic vapor-phase epitaxy. A high-resolution cross-sectional transmission electron microscope image revealed their cubic crystal structure. In0.03Ga0.97N grown at 770 degrees C showed near band edge emission at 3.12 eV and its peak width was 110 meV at room temperature. The indium molar fraction tended to decrease when the growth temperature increased above 720 degrees C It also decreased as the NH3 flow rate decreased. The lowest energy of the near-band edge emission of these InGaN alloys at room temperature was 2.98 eV.

引用

页码：529 / 534

页数：6

共 50 条

[21] Growth and characterization of cubic-CdS layers on (100) GaAs in metalorganic vapor-phase epitaxy [J].

Yasuda, K ;

Samion, HB ;

Miyata, M ;

Araki, N ;

Masuda, Y ;

Tomita, Y .

JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) :477-481

[22] ADVANCES IN METALORGANIC VAPOR-PHASE EPITAXY [J].

TISCHLER, MA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1990, 34 (06) :828-848

[23] METALORGANIC PRECURSORS FOR VAPOR-PHASE EPITAXY [J].

JONES, AC .

JOURNAL OF CRYSTAL GROWTH, 1993, 129 (3-4) :728-773

[24] Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy [J].

Suwanyangyaun, Pattana ;

Sanorpim, Sakuntam ;

Onabe, Kentaro .

THIN SOLID FILMS, 2020, 709 (709)

[25] Selective growth of cubic GaN an patterned GaAs(100) substrates by metalorganic vapor phase epitaxy [J].

Wu, J ;

Kudo, M ;

Nagayama, A ;

Yaguchi, H ;

Onabe, K ;

Shiraki, Y .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01) :557-560

[26] Metalorganic vapor phase epitaxy growth of high quality cubic GaN on GaAs (100) substrates [J].

Wu, J ;

Yaguchi, H ;

Onabe, K ;

Shiraki, Y ;

Ito, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1440-1442

[27] Metalorganic vapor-phase epitaxy of cubic AlxGa1-xN alloy on a GaAs (100) substrate [J].

Appl Phys Lett, 20 (2720)

[28] Metalorganic vapor-phase epitaxy of cubic AlxGa10xN alloy on a GaAs (100) substrate [J].

Nakadaira, A ;

Tanaka, H .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2720-2722

[29] Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy [J].

Schulze, F ;

Dadgar, A ;

Bläsing, J ;

Hempel, T ;

Diez, A ;

Christen, J ;

Krost, A .

JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) :485-488

[30] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY [J].

PAK, K ;

WAKAHARA, A ;

SATO, T ;

TAKAGI, Y ;

YOSHIDA, A ;

YONEZU, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) :C576-C576

← 1 2 3 4 5 →