A 55 nm Triple Gate Oxide 9 Metal Layers SiGe BiCMOS Technology Featuring 320 GHz fT/370 GHz fMAX HBT and High-Q Millimeter-Wave Passives

被引：118

作者：

Chevalier, P. ^{[1
]}

Avenier, G. ^{[1
]}

Ribes, G. ^{[1
]}

Montagne, A. ^{[1
]}

Canderle, E. ^{[1
]}

Celi, D. ^{[1
]}

Derrier, N. ^{[1
]}

Deglise, C. ^{[1
]}

Durand, C. ^{[1
]}

Quemerais, T. ^{[1
]}

Buczko, M. ^{[1
]}

Gloria, D. ^{[1
]}

Robin, O. ^{[1
]}

Petitdidier, S. ^{[1
]}

Campidelli, Y. ^{[1
]}

Abbate, F. ^{[1
]}

Gros-Jean, M. ^{[1
]}

Berthier, L. ^{[1
]}

Chapon, J. D. ^{[1
]}

Leverd, F. ^{[1
]}

Jenny, C. ^{[1
]}

Richard, C. ^{[1
]}

Gourhant, O. ^{[1
]}

De-Buttet, C. ^{[2
]}

Beneyton, R. ^{[1
]}

Maury, P. ^{[1
]}

Joblot, S. ^{[1
]}

Favennec, L. ^{[1
]}

Guillermet, M. ^{[2
]}

Brun, P. ^{[2
]}

Courouble, K. ^{[1
]}

Haxaire, K. ^{[1
]}

Imbert, G. ^{[1
]}

Gourvest, E. ^{[1
]}

Cossalter, J. ^{[1
]}

Saxod, O. ^{[1
]}

Tavernier, C. ^{[1
]}

Foussadier, F. ^{[1
]}

Ramadout, B. ^{[1
]}

Bianchini, R. ^{[1
]}

Julien, C. ^{[1
]}

Ney, D. ^{[1
]}

Rosa, J. ^{[1
]}

Haendler, S. ^{[1
]}

Carminati, Y. ^{[1
]}

Borot, B. ^{[1
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, Crolles, France

[2] CEA LETI, Crolles, France

来源：

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2014年

关键词：

D O I：

10.1109/IEDM.2014.7046978

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 mu m(2) 6T-SRAM bit cell. High Speed (HS) HBT exhibits 320 GHz f(T) and 370 GHz f(MAX) associated with a CML ring oscillator gate delay tau(D) of 2.34 ps. Transmission lines, capacitors, high-Q varactors and inductors dedicated to millimeter-wave applications are also available.

引用

页数：3

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Montusclat, Sebastien ;

Margain, Alain ;

Pruvost, Sebastien ;

Nicolson, Sean T. ;

Yau, Kenneth H. K. ;

Revil, Nathalie ;

Gloria, Daniel ;

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