Synthesis of Triphenylsulfonium Triflate Bound Copolymer for Electron Beam Lithography

被引:5
作者
Kwon, Ojung [1 ]
Sagar, Ashok D. [2 ]
Kang, Ha Na [1 ]
Kim, Hyun-Mi [3 ]
Kim, Ki-Bum [3 ]
Lee, Haiwon [1 ,4 ]
机构
[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea
[2] Swami Raman & Teerth Univ, Dept Polymer Chem, Nanded 431606, India
[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
[4] Hanyang Univ, Inst Nano Sci & Technol, Seoul 133791, South Korea
关键词
Polymer-Bound PAG; Photoacid Generator; E-Beam Lithography; Negative Tone Photoresist; LINE EDGE ROUGHNESS; PHOTOACID GENERATOR; RESISTS; POLYMER; NM;
D O I
10.1166/jnn.2014.8826
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photoacid generator (PAG) has been widely used as a key component in photoresist for high-resolution patterning with high sensitivity. A novel acrylic monomer, triphenylsulfonium salt methyl methacrylate (TPSMA), was synthesized and includes triphenylsulfonium triflate as a PAG. The poly(MMA-co-TPSMA) (PMT) as a polymer-bound PAG was synthesized with methyl methacrylate (MMA) and TPSMA for electron beam lithography. Characterization of PMT was carried out by NMR and FTIR. The molecular weight was analyzed by GPC. Thermal properties were studied using TGA and DSC. Thecharacterization results were in good agreement with corresponding chemical compositions and thermal stability. PMT was subsequently employed in electron beam lithography and its lithographic performance was confirmed by FE-SEM. This PMT was accomplished to improve the lithographic performance including sensitivity, line width roughness (LWR) and resolution. We found that PMT was capable of 20 nm negative tone patterns with better sensitivity than hydrogensilsesquioxane (HSQ) which is a conventional negative tone resist.
引用
收藏
页码:6270 / 6273
页数:4
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