Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

被引：7

作者：

Sakimura, N. ^{[1
,2
]}

Nebashi, R. ^{[1
]}

Natsui, M. ^{[2
]}

Ohno, H. ^{[2
,3
,4
]}

Sugibayashi, T. ^{[1
]}

Hanyu, T. ^{[2
]}

机构：

[1] NEC Corp Ltd, Green Platform Res Labs, Tsukuba, Ibaraki, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 980, Japan

[3] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 980, Japan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

关键词：

D O I：

10.1063/1.4869287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400-mu A peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm(2)/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10(-12) per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I-C0) became less than 30 mu A. (C) 2014 AIP Publishing LLC.

引用

页数：3

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