High-power ridge-waveguide distributed-feedback lasers emitting at 860 nm

被引：17

作者：

Wenzel, H ^{[1
]}

Braun, M ^{[1
]}

Fricke, J ^{[1
]}

Klehr, A ^{[1
]}

Knauer, A ^{[1
]}

Ressel, P ^{[1
]}

Erbert, G ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 25期

关键词：

D O I：

10.1049/el:20021145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented describing distributed-feedback lasers emitting at 860 nm in a single transverse and longitudinal mode up to 300 mW The lasers have a second order grating formed into an InGaP/GaAsP/InGaP multilayer structure embedded in the p-AlGaAs cladding layer.

引用

页码：1676 / 1677

页数：2

共 3 条

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Wenzel, H .

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[2] HIGH-POWER SINGLEMODE ALGAAS DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODES OPERATING AT 856NM [J].

MAJOR, JS ;

OBRIEN, S ;

GULGAZOV, V ;

WELCH, DF ;

LANG, RJ .

ELECTRONICS LETTERS, 1994, 30 (06) :496-497

[3]

MENNA R, 2001, 27 ECOC AMST

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