Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes

被引：28

作者：

Dai, Daoxin ^{[1
]}

Chen, Hui-Wen ^{[1
]}

Bowers, John E. ^{[1
]}

Kang, Yimin ^{[2
]}

Morse, Mike ^{[2
]}

Paniccia, Mario J. ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 19期

关键词：

GAIN-BANDWIDTH-PRODUCT; FREQUENCY-RESPONSE; CIRCUIT MODEL; ENHANCEMENT;

D O I：

10.1364/OE.17.016549

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work the impedance of separate-absorption-charge-multiplication Ge/Si avalanche photodiodes (APD) is characterized over a large range of bias voltage. An equivalent circuit with an inductive element is presented for modeling the Ge/Si APD. All the parameters for the elements included in the equivalent circuit are extracted by fitting the measured S-22 with the genetic algorithm optimization. Due to a resonance in the avalanche region, the frequency response of the APD has a peak enhancement when the bias voltage is relatively high, which is observed in the measurement and agrees with the theoretical calculation shown in this paper. (C) 2009 Optical Society of America

引用

页码：16549 / 16557

页数：9

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