Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature

被引：34

作者：

Tian, Kai ^{[1
]}

Hallen, Anders ^{[2
]}

Qi, Jinwei ^{[1
]}

Nawaz, Muhammad ^{[3
]}

Ma, Shenhui ^{[4
,5
]}

Wang, Menghua ^{[1
]}

Guo, Shuwen ^{[1
]}

Elgammal, Karim ^{[2
]}

Li, Ange ^{[1
]}

Liu, Weihua ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China

[2] KTH Royal Inst Technol, Sch Elect Engn & Comp Sci EECS, S-16440 Kista, Sweden

[3] ABB Corp Res, S-72478 Vasteras, Sweden

[4] Xi An Jiao Tong Univ, Dept Microelect, Xian 710049, Shaanxi, Peoples R China

[5] Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 10期

基金：

中国国家自然科学基金;

关键词：

ON-resistance; planar metal-oxide-semiconductor field-effect transistors (MOSFETs); short-circuit capability; silicon carbide; switching loss; switching time; temperature; threshold voltage; Trench MOSFETs; POWER MOSFET; SHORT-CIRCUIT; SIC MOSFET; PERFORMANCE; DEPENDENCE; MOBILITY; DENSITY; DEVICES;

D O I：

10.1109/TED.2019.2934507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, the static, dynamic, and short-circuit properties of 1.2-kV commercial 4H-SiC planar and trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are compared and analyzed in a wide temperature range from 90 to 493 K. The temperature-dependent specific ON-resistance (Rsp-ON) and threshold voltage (V-th) are analyzed in relation to the density of the interface state. The turn-on rise and turn-off fall times (T-r and T-f) and the corresponding energy loss (E-r and E-f) are extracted from a double-pulse test from cryogenic to high temperature and analyzed. The short-circuit capability of the two structures is studied at low temperature for the first time. The comprehensive comparison and analysis of the planar and trench gate MOSFET versus temperature in this work show the importance to study applications with SiC MOSFETs in a wide temperature range, especially for the cryogenic temperatures.

引用

页码：4279 / 4286

页数：8

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