Development of thin-film multijunction thermal converters at NIST

被引:16
作者
Kinard, JR
Novotny, DB
Lipe, TE
Huang, DX
机构
[1] NIST,DIV SEMICOND ELECT,ELECT & ELECT ENGN LAB,TECHNOL ADM,US DEPT COMMERCE,GAITHERSBURG,MD 20899
[2] BALLANTINE LABS INC,CEDAR KNOLLS,NJ 07927
关键词
D O I
10.1109/19.571853
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper gives an overview of the development of thin-film multijunction thermal converters (FMJTC's) at the National Institute of Standards and Technology (NIST). A historical perspective of film thermal converters is presented, followed by descriptions of the motivation, fabrication processes, physical characteristics, and the electrical properties of the FMJTC's produced at NIST, Integrated micropotentiometers that incorporate FMJTC's and thermal converters, produced by an alternative fabrication technology using a CMOS foundry, are also described. The paper concludes with a report on the present status of the FMJTC project and future directions.
引用
收藏
页码:347 / 351
页数:5
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