CVD elaboration and in situ characterization of barium silicate thin films

被引：4

作者：

Geneves, Thomas ^{[1
]}

Imhoff, Luc ^{[1
]}

Domenichini, Bruno ^{[1
]}

Peterle, Paul Maurice ^{[1
]}

Bourgeois, Sylvie ^{[1
]}

机构：

[1] Univ Bourgogne, CNRS, UMR 5209, Inst Carnot Bourgogne, F-21078 Dijon, France

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2010年 / 30卷 / 02期

关键词：

Silicate; Barium; Films; Spectroscopy; Insulator; CHEMICAL-VAPOR-DEPOSITION; GATE DIELECTRICS; PRECURSORS; COMPLEXES; MOCVD; SUPERCONDUCTORS; SPECTROSCOPY; INTERFACE; STABILITY; BATIO3;

D O I：

10.1016/j.jeurceramsoc.2009.05.027

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study is concerned with the elaboration of barium silicate thin films by metal organic chemical vapor deposition (MOCVD) and in situ characterization by X-ray photoemission spectroscopy (XPS) with an apparatus connected to the deposition reactor. The difficulty to find an efficient metal organic precursor for barium is described. After characterizations of the selected reactant, Ba(TMHD)(2)tetraglyme, the development of an original specific vapor delivering source which allows reactant sublimation in the CVD reactor was performed. In the most optimized cases, including use of oxygen introduction during the deposition, barium silicate films were obtained. Moreover, non-negligible amounts of carbon and presence of barium oxide on the top of the layers were observed. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：441 / 446

页数：6

共 25 条

[1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].

Alers, GB ;

Werder, DJ ;

Chabal, Y ;

Lu, HC ;

Gusev, EP ;

Garfunkel, E ;

Gustafsson, T ;

Urdahl, RS .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1517-1519

[2] Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometric films [J].

Brevet, A. ;

Imhoff, L. ;

de Lucas, M. C. Marco ;

Domenichini, B. ;

Bourgeois, S. .

THIN SOLID FILMS, 2007, 515 (16) :6407-6410

[3] Initial stages of TiO2 thin films MOCVD growth studied by in situ surface analyses [J].

Brevet, A. ;

Peterle, P. M. ;

Imhoff, L. ;

de Lucas, M. C. Marco ;

Bourgeois, S. .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E1263-E1268

[4] Interfacial reaction during MOCVD growth revealed by in situ ARXPS [J].

Brevet, A ;

Chassagnon, R ;

Imhoff, L ;

de Lucas, MCM ;

Domenichini, B ;

Bourgeois, S .

SURFACE AND INTERFACE ANALYSIS, 2006, 38 (04) :579-582

[5] Kinetics of evaporation of barium THD precursors used for organometallic chemical vapor deposition (OMCVD) thin films. [J].

Burtman, V ;

Schieber, M ;

Yitzchaik, S ;

Yaroslavsky, Y .

JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) :801-805

[6] Elaboration and characterization of barium silicate thin films [J].

Geneves, T. ;

Domenichini, B. ;

Imhoff, L. ;

Potin, V. ;

Heintz, O. ;

Peterle, P. M. ;

Bourgeois, S. .

MICRON, 2008, 39 (08) :1145-1148

[7] Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 [J].

Gutowski, M ;

Jaffe, JE ;

Liu, CL ;

Stoker, M ;

Hegde, RI ;

Rai, RS ;

Tobin, PJ .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1897-1899

[8] Synthesis and characterisation of cyclopentadienyl complexes of barium:: precursors for atomic layer deposition of BaTiO3 [J].

Hatanpää, T ;

Vehkamäki, M ;

Mutikainen, I ;

Kansikas, J ;

Ritala, M ;

Leskelä, M .

DALTON TRANSACTIONS, 2004, (08) :1181-1188

[9] Novel monomeric barium complexes as volatile precursors for chemical vapour deposition [J].

Hill, Matthew R. ;

Russell, Jennifer J. ;

Roberts, Nicholas K. ;

Lamb, Robert N. .

POLYHEDRON, 2007, 26 (02) :493-507

[10] Photoelectron spectroscopy studies of SiO2/Si interfaces [J].

Hirose, K. ;

Nohira, H. ;

Azuma, K. ;

Hattori, T. .

PROGRESS IN SURFACE SCIENCE, 2007, 82 (01) :3-54

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