Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

被引：40

作者：

Kim, JK

Kim, J

Song, TK

Kim, SS ^{[1
]}

机构：

[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Kyungnam, South Korea

[2] Changwon Natl Univ, Inst Basic Sci, Chang Won 641773, Kyungnam, South Korea

[3] Changwon Natl Univ, Dept Chem Technol, Chang Won 641773, Kyungnam, South Korea

[4] Changwon Natl Univ, Dept Cereal Sci & Engn, Chang Won 641773, Kyungnam, South Korea

来源：

THIN SOLID FILMS | 2002年 / 419卷 / 1-2期

关键词：

ferroelectric properties; X-ray diffraction; scanning electron microscopy; capacitors;

D O I：

10.1016/S0040-6090(02)00550-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi4Ti3O12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The niobium-doped Bi4Ti3O12 (Nb-BiTiO) films annealed at 700 degreesC for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2P(t)) and coercive field (2E(c)) of the Nb-BiTiO film annealed at 700 degreesC were 28 muC/cm(2) and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 X 10(10) cycles, Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：225 / 229

页数：5

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