Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

被引：40
作者：
Kim, JK
Kim, J
Song, TK
Kim, SS [1 ]
机构：
[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, Kyungnam, South Korea
[2] Changwon Natl Univ, Inst Basic Sci, Chang Won 641773, Kyungnam, South Korea
[3] Changwon Natl Univ, Dept Chem Technol, Chang Won 641773, Kyungnam, South Korea
[4] Changwon Natl Univ, Dept Cereal Sci & Engn, Chang Won 641773, Kyungnam, South Korea
来源：
THIN SOLID FILMS | 2002年 / 419卷 / 1-2期
关键词：
ferroelectric properties; X-ray diffraction; scanning electron microscopy; capacitors;
D O I：
10.1016/S0040-6090(02)00550-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi4Ti3O12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The niobium-doped Bi4Ti3O12 (Nb-BiTiO) films annealed at 700 degreesC for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2P(t)) and coercive field (2E(c)) of the Nb-BiTiO film annealed at 700 degreesC were 28 muC/cm(2) and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 X 10(10) cycles, Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：225 / 229
页数：5
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