Interfacial reactions at the joints of PbTe thermoelectric modules using Ag-Ge braze

被引:23
作者
Chen, Sinn-Wen [1 ]
Wang, Jen-Chieh [1 ]
Chen, Ling-Chieh [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu, Taiwan
关键词
PbTe; Thermoelectric; Ag-Ge; Ni; Co; Intermetallic compound; N-TYPE PBTE; LEAD-TELLURIDE; POWER GENERATION; DEGREES-C; COUPLES; SN; SOLDERS; EVOLUTION; DIFFUSION; DEVICES;
D O I
10.1016/j.intermet.2016.11.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
PbTe-based alloys are important mid-temperature thermoelectric materials. A suitable braze alloy and reliable joints are the basic requirements of a thermoelectric module. This study investigates interfacial reactions at the joints of the PbTe thermoelectric modules using Ag-Ge eutectic braze, Ag-24.5 at%Ge, with Ni or Co as barrier layer. These results indicate Co is a more suitable barrier layer candidate than Ni if Ag-Ge eutectic is used as braze. The Co/PbTe and Ni/PbTe interfacial reactions are negligible. Two reaction phases, CoGe and beta-Co5Ge3, are formed in the Ag-Ge eutectic/Co couples reacted at both 400 degrees C and 750 degrees C, and Ge is the fastest diffusion species among the three elements. Only the epsilon-Ni5Ge3 phase is formed in the Ag-Ge eutectic/Ni couples reacted at both 400 degrees C and 750 degrees C. In the Ag-Ge eutectic/Ni couples, both Ni and Ge diffuse significantly, but Ni is faster. The reaction layer thickness is in proportion to the square root of reaction time, and the slopes of these lines of growth rates in the Ag-Ge eutectic/Co couples are 0.33 mu m/root hr and 40.1 mu m/root hr at 400 degrees C and 750 degrees C, and are 0.86 mu m/root hr and 124.9 mu m/root hr in the Ag-Ge eutectic/Ni couples, respectively. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:55 / 63
页数:9
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