Gate-tunable the interface properties of GaAs-WSe2 (1D-2D) vdWs heterojunction for high-responsivity, self-powered photodetector

被引：41

作者：

Chen, Xue ^{[1
]}

Jiang, Bei ^{[2
]}

Wang, Dengkui ^{[1
]}

Li, Guoli ^{[3
]}

Wang, Hailu ^{[4
]}

Wang, Hao ^{[4
]}

Wang, Fang ^{[4
]}

Wang, Peng ^{[4
]}

Liao, Lei ^{[2
,3
]}

Wei, Zhipeng ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

[3] Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micro Nanooptoelect Devices, Changsha 410082, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Gallium arsenide - Heterojunctions - Semiconducting gallium - Van der Waals forces - III-V semiconductors - Photons;

D O I：

10.1063/5.0035275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Integrated mixed-dimensional (MD) van der Waals (vdWs) heterojunctions for self-powered photodetectors have attracted intense attention. Performances of these photodetectors are highly dependent on the interface properties, including the semiconductor-metal interface and the semiconductor-semiconductor interface. To date, how to balance the interface properties remains to be explored. Here, we explore a straightforward strategy to balance the interface properties of the MD-vdWs heterojunction photodetector, by tuning the Fermi level of ambipolar two-dimensional material with a gate bias. The effectiveness of gate-tunable interface properties is verified by a GaAs-WSe2 MD vdWs heterojunction self-powered photodetector with different metal contacts. Under the gate biasing, the responsivity is enhanced from 122.55mA/W to 510.98mA/W in the GaAs-WSe2 heterojunction photodetector with the Au/Cr electrodes, which is better than the state-of-the-art GaAs-based self-powered photodetectors. This work provides a simple and effective method to fabricate high-responsivity, self-powered heterojunction photodetectors by gate-tunable interface properties.

引用

页数：6

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