Palladium Ohmic contact on hydrogen-terminated single crystal diamond film (Reprinted from Diamond and Related Materials, vol 59, pg 90-94, 2015)

被引:0
|
作者
Wang, W. [1 ]
Hu, C. [1 ]
Li, F. N. [1 ]
Li, S. Y. [1 ]
Liu, Z. C. [1 ]
Wang, F. [1 ]
Fu, J. [1 ]
Wang, H. X. [1 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Shaanxi, Peoples R China
关键词
Palladium; Ohmic contact; Specific contact resistance; XPS; Annealing; Surface treatment; OPERATION; SURFACES;
D O I
10.1016/j.diamond.2016.01.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the specific contact resistivity (pc) of 1.8 x 10(-6) Omega cm(2) evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 degrees C for 3 min at each temperature. As the temperature increased, pc firstly decreased to 4.93 x 10(-7) Omega cm(2) at 400 degrees C and then increased. The barrier height was evaluated to be -0.15 eV and -0.03 eV for as-deposited and 700 degrees C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on p(c), among which HNO3 vapor treated sample indicates a lower value of 532 x 10-6 Omega cm(2). (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 179
页数:5
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