Magnetism in Si1-xMnx diluted magnetic semiconductor thin films

被引：3

作者：

Anh, Tran Thi Lan ^{[1
]}

Ihm, Young Eon ^{[1
]}

Kim, Dojin ^{[1
]}

Kim, Hyojin ^{[1
]}

Kim, Chang Soo ^{[2
]}

Yu, Sang Soo ^{[3
]}

机构：

[1] Chungnam Natl Univ, Sch Mat Engn, Taejon 305764, South Korea

[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

[3] Samsung Techwin Co Ltd, Chang Won 641120, Kyeungnam, South Korea

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 01期

关键词：

Molecular beam epitaxy; Electrical properties and measurements; Magnetic properties; Si-Mn; Thin films; MN; FERROMAGNETISM; SI;

D O I：

10.1016/j.tsf.2009.04.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electrical and magnetic properties of p-type semiconductor thin films of Si1-xMnx/Si (x = 0.036 and 0.05) grown by molecular beam epitaxy. Experimental results reveal that the resistivity of the samples decreases gradually with increasing measurement temperature, which can be described well by Mott's variable-range-hopping model. All the samples exhibit the ferromagnetic ordering above room temperature. Among these samples, Si0.95Mn0.05 has a higher hole density and magnetization. This indicates an enhancement of hole-mediated ferromagnetic exchange interactions when the Mn-doping concentration is increased. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：309 / 312

页数：4

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