Process Simulation of Trench Gate and Plate and Trench drain SOI NLIGBT with TCAD Tools

被引：1
|
作者：
Zhang, H. P. [1 ]
Sun, L. L. [1 ]
Jiang, L. F. [1 ]
Ma, L. J. [1 ]
Lin, M. [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Minist Educ China, Key Lab RF Circuits & Syst, Hangzhou 310018, Peoples R China
来源：
2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4 | 2008年
关键词：
process simulation; TGFPTD; LIGBT; SOI; CMOS; TCAD;
D O I：
10.1109/APCCAS.2008.4746201
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper process simulation of a novel structural Silicon On Insulator (SOI) LIGBT cell with Trench Gate and Field Plate and Trench Drain (TGFPTD) was done in a sequence of advanced SOI CMOS processes with Silvaco TCAD. The simulated results indicate that the proposed TGFPTD SOI LIGBT cell is feasible to be fabricated in advanced SOI CMOS technologies and the vertical channel length of the vertical gate nMOSFET could be reduced to about 170nm.
引用
收藏
页码：1037 / 1040
页数：4
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