Oxygen aggregation in Czochralski-grown silicon heat treated at 450 degrees C under compressive stress

It has been established that the oxygen aggregation processes in Czochralski-grown silicon (Ct-Si) at 450 degrees C are strongly affected by high hydrostatic pressure. We observed the enhanced production of shallow thermal donors with ionization energies of 30-40 meV and deep donors at approximate to E-C-0.1 eV under a pressure of 1 GPa. In contrast, the concentration of the well-known double thermal donors was found to be much less than that in Cz-Si heat treated without stress. The latter effect may be associated with the involvement of self-interstitials in their formation. The enhanced production of other thermal donors is thought to be caused by increasing diffusivity of oxygen under the high stress. (C) 1997 American Institute of Physics.