Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport

被引：6

作者：

Riess, P ^{[1
]}

Ghibaudo, G ^{[1
]}

Pananakakis, G ^{[1
]}

机构：

[1] ENSERG, INPG, Lab Phys Composants Semicond, F-38016 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.373114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An approach giving a physical understanding of the stress-induced leakage current (SILC) generation kinetics based on anode hole injection and hole dispersive transport in the oxide is presented. It is shown that the SILC is not directly correlated to the defects responsible for oxide breakdown. However, it is suggested that trapped holes can impact on the defect creation rate and, in turn, on the breakdown generation. (C) 2000 American Institute of Physics. [S0021-8979(00)02909-1].

引用

页码：4626 / 4628

页数：3

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