Gas source MBE growth of GaN rich side of GaN1-xPx using ion-removed ECR radical cell

被引：40
作者：
Iwata, K [1 ]
Asahi, H [1 ]
Asami, K [1 ]
Gonda, S [1 ]
机构：
[1] OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷
基金：
日本学术振兴会;
关键词：
GaN; GaNP; gas source MBE; ECR radical cell; band gap narrowing; phase separation; EPITAXY; ALLOY;
D O I：
10.1016/S0022-0248(96)00926-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaN-rich side of GaN1-xPx alloy are grown on (0 0 0 1) sapphire substrates by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ion removed ECR radical cell after the growth of high-quality GaN layers. GaN1-xPx exhibits potentially large variation of band-gap energy with P composition due to its large bowing. Maximum P composition of x = 0.015 is obtained. However, at the growth condition of high PH3 flow rate, phase separation into GaN-rich GaN1-xPx and GaP-rich GaP1-yNy is observed. Near band edge excitonic photoluminescence (PL) peak from GaN-rich side of GaN1-xPx layers shows large red shift with P composition. It suggests that the direct band edge of GaNP alloy shows large bowing.
引用
收藏
页码：150 / 155
页数：6
相关论文
共 15 条
  • [1] INVESTIGATION OF THE THERMAL-DISSOCIATION OF PH3 AND NH3 USING QUADRUPOLE MASS-SPECTROMETRY[J]. BAILLARGEON, JN;CHENG, KY;JACKSON, SL;STILLMAN, GE. JOURNAL OF APPLIED PHYSICS, 1991(12)
  • [2] LUMINESCENCE QUENCHING AND THE FORMATION OF THE GAP1-XNX ALLOY IN GAP WITH INCREASING NITROGEN-CONTENT[J]. BAILLARGEON, JN;CHENG, KY;HOFLER, GE;PEARAH, PJ;HSIEH, KC. APPLIED PHYSICS LETTERS, 1992(20)
  • [3] RELAXATION PROCESS OF THE THERMAL STRAIN IN THE GAN/ALPHA-AL2O3 HETEROSTRUCTURE AND DETERMINATION OF THE INTRINSIC LATTICE-CONSTANTS OF GAN FREE FROM THE STRAIN[J]. DETCHPROHM, T;HIRAMATSU, K;ITOH, K;AKASAKI, I. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992(10B)
  • [4] HETEROEPITAXIAL GROWTH OF GAN1-XPX (X-LESS-THAN-OR-EQUAL-TO-0.09) ON SAPPHIRE SUBSTRATES[J]. IGARASHI, O. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992(12A)
  • [5] Gas source molecular beam epitaxial growth of GaN1-xPx (x<=0.015) using ion-removed electron cyclotron resonance radical cell[J]. Iwata, K;Asahi, H;Asami, K;Gonda, S. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996(12B)
  • [6] High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2x2) and (4x4) reflection high energy electron diffraction patterns[J]. Iwata, K;Asahi, H;Yu, SJ;Asami, K;Fujita, H;Fushida, M;Gonda, S. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996(3A)
  • [7] IWATA K, 1995, TOP WORKSH 3 5 NITR
  • [8] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE[J]. KONDOW, M;UOMI, K;HOSOMI, K;MOZUME, T. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994(8A)
  • [9] METALORGANIC VAPOR-PHASE EPITAXY OF GAP1-XNX ALLOYS ON GAP[J]. MIYOSHI, S;YAGUCHI, H;ONABE, K;ITO, R;SHIRAKI, Y. APPLIED PHYSICS LETTERS, 1993(25)
  • [10] MIYOSHI S, 1995, TOP WORKSH 3 5 NITR
12