Growth and process induced dislocations in zinc oxide crystals

被引：27
|
作者：
Dhanaraj, G. [1 ]
Dudley, M.
Bliss, D.
Callahan, M.
Harris, M.
机构：
[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
[2] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 297卷 / 01期
关键词：
characterization; crystal morphology; defects; growth from solutions; hydrothermal crystal growth; single crystal growth;
D O I：
10.1016/j.jcrysgro.2006.09.025
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Zinc oxide crystals were grown using hydrothermal method, and the habit faces were indexed by computing from inter-axial angles of the as grown boules. The dislocation structures were studied using synchrotron white beam X-ray topography. Grown-in dislocations as well as process-induced defects were characterized in the ZnO crystals. Knoop and Vickers micro-hardness were studied on sliced crystal plates. Chemical etching was used to study the dislocations running perpendicular to the wafer. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：74 / 79
页数：6
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