Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors

被引：7

作者：

Klingenberg, R. ^{[1
]}

Krasel, O. ^{[1
]}

Mass, M. ^{[1
]}

Dobos, D. ^{[1
]}

Goessling, C. ^{[1
]}

Wunstorf, R. ^{[1
]}

机构：

[1] Univ Dortmund, D-44221 Dortmund, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 568卷 / 01期

关键词：

tracking and position-sensitive detectors; solid-state detectors; radiation effects; neutron and proton irradiation;

D O I：

10.1016/j.nima.2006.05.273

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to 10(15) n(eq) cm(-2). Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency. Independently, charge collection efficiencies have been determined in dedicated test beam data employing ATLAS pixel modules. Considering the geometry of pad and pixel structures the simulation for the tested fluence range can be verified and allows to extrapolate to larger fluences. This yields a useful input for the design of future silicon-based pixel detectors applicable in Super-LHC experiments. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：34 / 40

页数：7

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