An organic charge trapping memory transistor with bottom source and drain contacts

被引：14

作者：

Debucquoy, Maarten ^{[1
,3
]}

Bode, Dieter ^{[1
,3
]}

Genoe, Jan ^{[1
]}

Gelinck, Gerwin H. ^{[2
]}

Heremans, Paul ^{[1
,3
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] TNO, Holst Ctr, NL-5656 AE Eindhoven, Netherlands

[3] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 10期

关键词：

lithography; organic compounds; random-access storage; FIELD-EFFECT TRANSISTORS; POLYMERIC GATE ELECTRET; ELEMENTS;

D O I：

10.1063/1.3223588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.

引用

页数：3

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