DC electrical conduction of zinc telluride thin films

被引：14
|
作者：
Ibrahim, A. A. [1 ]
机构：
[1] Menia Univ, Fac Sci, Dept Phys, Minia, Egypt
来源：
VACUUM | 2006年 / 81卷 / 04期
关键词：
zinc telluride; thin films; conduction; XRD;
D O I：
10.1016/j.vacuum.2006.07.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc telluride (ZnTe) thin films were deposited by thermal evaporation onto glass substrates kept at room temperature. X-ray diffraction studies showed that the films were polycrystalline and of cubic structure. The current-voltage (I-V) characteristics of the Au/ZnTe/Au thin film sandwich system at different temperatures were studied. The DC conduction was explained using the Schottky or Jonscher-Ansari modified Pool-Frenkel mechanism. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：527 / 530
页数：4
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